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| NTGD4167C Power MOSFET Features Complementary, 30 V, +2.9/-2.2 A, TSOP-6 Dual * * * * * * Complementary N-Channel and P-Channel MOSFET Small Size (3 x 3 mm) Dual TSOP-6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response Independently Connected Devices to Provide Design Flexibility This is a Pb-Free Device http://onsemi.com V(BR)DSS N-Ch 30 V P-Ch -30 V RDS(on) MAX 90 mW @ 4.5 V 125 mW @ 2.5 V 170 mW @ -4.5 V 300 mW @ -2.5 V ID MAX (Note 1) 2.6 A 2.2 A -1.9 A -1.0 A Applications * DC-DC Conversion Circuits * Load/Power Switching with Level Shift MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage N-Channel Continuous Drain Current (Note 1) P-Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current (N-Ch & P-Ch) TA = 25C TA = 85C TA = 25C TA = 25C TA = 85C TA = 25C TA = 25C tp = 10 ms PD IDM TJ, TSTG IS TL ID Steady State t5s Steady State t5s Steady State t5s N-Ch P-Ch Symbol VDSS VGS ID Value 30 12 2.6 1.9 2.9 -1.9 -1.4 -2.2 0.9 1.1 8.6 -6.3 -55 to 150 0.9 260 C A C A W A Unit V V A D1 D2 G1 S1 N-CHANNEL MOSFET G2 S2 P-CHANNEL MOSFET MARKING DIAGRAM 1 TSOP-6 CASE 318G STYLE 13 TA M G TA MG G 1 Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) = Specific Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) PIN CONNECTION Symbol RqJA RqJA Value 140 110 Unit C/W C/W S2 G2 G1 D1 S1 D2 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 5 s (Note 1) 1 2 3 (Top View) 6 5 4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. (c) Semiconductor Components Industries, LLC, 2008 December, 2008 - Rev. 1 1 Publication Order Number: NTGD4167C/D NTGD4167C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS N P N P N P N P Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain-to-Source On Resistance VGS(TH) RDS(on) N P N P Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Gate Charge Gate-to-Drain "Miller" Charge Total Gate Charge Threshold Gate Charge Gate-to-Source Gate Charge Gate-to-Drain "Miller" Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf P VGS = -4.5 V, VDD = -15 V, ID = -1.0 A, RG = 6.0 W N VGS = 4.5 V, VDD = 15 V, ID = 1.0 A, RG = 6.0 W 7.0 4.0 14 2.0 8.0 8.0 22 8.0 ns CISS COSS CRSS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) QG(TH) QGS QGD P VGS = -4.5 V, VDS = -15 V, ID = -2.0 A N VGS = 4.5 V, VDS = 15 V, ID = 2.0 A P N f = 1 MHz, VGS = 0 V VDS = -15 V VDS = 15 V 295 48 27 419 51 26 3.7 0.6 0.9 0.8 3.9 0.6 1.0 1.0 6.0 nC 5.5 pF gFS N P VGS = VDS ID = 250 mA ID = -250 mA 0.5 -0.5 0.9 -1.1 52 67 130 202 2.6 2.6 1.5 -1.5 90 125 170 300 S mW V IGSS N P VGS = 0 V, VDS = 24 V VGS = 0 V, VDS = -24 V VGS = 0 V, VDS = 24 V VGS = 0 V, VDS = -24 V TJ = 25 C TJ = 85 C VGS = 0 V ID = 250 mA ID = -250 mA 30 -30 21.4 22.2 1.0 -1.0 10 -10 100 100 nA mA mV/C V Symbol N/P Test Conditions Min Typ Max Unit VDS = 0 V, VGS = 12 V VDS = 0 V, VGS = 12 V VGS = 4.5 V , ID = 2.6 A VGS = 2.5 V , ID = 2.2 A VGS = -4.5 V , ID = -1.9 A VGS = -2.5 V, ID = -1.0 A VDS = 15 V, ID = 2.6 A VDS = -15 V , ID = -1.9 A 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. http://onsemi.com 2 NTGD4167C 3. Switching characteristics are independent of operating junction temperatures. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge Symbol VSD tRR ta tb QRR tRR ta tb QRR P VGS = 0 V, dIS / dt = 100 A/ms, IS = -0.9 A N VGS = 0 V, dIS / dt = 100 A/ms, IS = 0.9 A N/P N P Test Conditions IS = 0.9 A IS = -0.9 A Min Typ 0.7 -0.8 8.0 5.0 3.0 3.0 12 10 2.0 7.0 nC nC ns Max 1.2 -1.2 ns Unit V DRAIN-SOURCE DIODE CHARACTERISTICS VGS = 0 V, TJ = 25 C http://onsemi.com 3 NTGD4167C N-CHANNEL TYPICAL CHARACTERISTICS 9.0 8.0 ID, DRAIN CURRENT (A) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1.5 V 2.5 V 9.0 8.0 ID, DRAIN CURRENT (A) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0.75 1 1.25 1.5 125C -55C 25C VDS = 5 V VGS = 4.5 V 3.5 V TJ = 25C 2.0 V 1.75 2 2.25 2.5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.20 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 ID = 2.6 A TJ = 25C 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0 Figure 2. Transfer Characteristics TJ = 25C VGS = 2.5 V VGS = 4.5 V 5.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On-Region vs. Gate-To-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 ID = 2.6 A VGS = 4.5 V C, CAPACITANCE (pF) 400 350 300 250 200 150 100 50 0 Figure 4. On-Resistance vs. Drain Current and Temperature TJ = 25C VGS = 0 V f = 1 MHz CISS COSS CRSS 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 4 NTGD4167C VGS, GATE-TO-SOURCE VOLTAGE (V) 5 4 VDS 3 2 1 0 0 1 2 3 4 QG, TOTAL GATE CHARGE (nC) QGS QGD VGS QT 16 14 12 10 8 6 ID = 2.0 A TJ = 25C VDS = 15 V 4 2 0 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) IS, SOURCE CURRENT (A) 1.0 TJ = 150C TJ = 25C 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 7. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 1.2 1.1 1.0 POWER (W) VGS(th) (V) 0.9 0.8 0.7 0.6 0.5 0.4 -50 -25 0 25 50 75 100 125 150 0 0.001 ID = 250 mA 30 40 Figure 8. Diode Forward Voltage versus Current 20 10 0.01 0.1 1 10 100 1000 TJ, JUNCTION TEMPERATURE (C) SINGLE PULSE TIME (s) Figure 9. Threshold Voltage 100 VGS = 12 V Single Pulse TA = 25C Figure 10. Single Pulse Maximum Power Dissipation ID, DRAIN CURRENT (A) 10 100 ms 1 1 ms 10 ms 0.1 RDS(on) Limit Thermal Limit Package Limit 1 10 dc 100 0.01 0.1 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 5 NTGD4167C 1 Duty Cycle = 0.5 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE NORMALIZED 0.2 0.1 0.05 0.02 0.01 Single Pulse 0.001 0.01 0.1 t, TIME (s) 1 10 100 1000 0.1 0.01 0.0001 Figure 12. FET Thermal Response http://onsemi.com 6 NTGD4167C P-CHANNEL TYPICAL CHARACTERISTICS 7.0 6.0 -ID, DRAIN CURRENT (A) 5.0 4.0 3.0 2.0 1.0 0 0 -1.5 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -2.0 V -3.0 V VGS = -5.0 V to -3.5 V -ID, DRAIN CURRENT (A) 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0.75 1 125C 1.25 1.5 1.75 25C -55C 2 2.25 2.5 2.75 3 VDS = -5 V -2.5 V -VDS, DRAIN-TO-SOURCE VOLTAGE (V) -VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 13. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.5 0.45 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ID = -1.9 A TJ = 25C 0.5 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0 Figure 14. Transfer Characteristics TJ = 25C VGS = -2.5 V VGS = -4.5 V 1.0 2.0 3.0 4.0 5.0 6.0 7.0 -VGS, GATE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE RESISTANCE -ID, DRAIN CURRENT (A) Figure 15. On-Region vs. Gate-To-Source Voltage 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 ID = -1.9 A VGS = -4.5 V C, CAPACITANCE (pF) 550 500 450 400 350 300 250 200 150 100 50 0 0 Figure 16. On-Resistance vs. Drain Current and Temperature TJ = 25C VGS = 0 V f = 1 MHz CISS CRSS 5 10 COSS 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 17. On-Resistance Variation with Temperature Figure 18. Capacitance Variation http://onsemi.com 7 NTGD4167C 5 -VGS, GATE-TO-SOURCE VOLTAGE (V) 4 -VDS 3 QGS 2 1 0 0 1 2 3 QG, TOTAL GATE CHARGE (nC) ID = -2.0 A TJ = 25C VDS = -15 V QGD -VGS QT 16 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) 14 12 10 8 6 4 2 0 4 Figure 19. Gate-to-Source and Drain-to-Source Voltage versus Total Charge 10 -IS, SOURCE CURRENT (A) TJ = 150C 1.4 1.3 1.2 1.1 1.0 TJ = 25C -VGS(th) (V) 1.0 0.9 0.8 0.7 0.6 0.5 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.4 -50 -25 0 25 50 75 100 125 150 ID = -250 mA -VSD, SOURCE-TO-DRAIN VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 20. Diode Forward Voltage versus Current 40 100 Figure 21. Threshold Voltage -ID, DRAIN CURRENT (A) 30 POWER (W) 10 VGS = -12 V Single Pulse TA = 25C 100 ms 20 1 1 ms 10 ms 10 0.1 0 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 RDS(on) Limit Thermal Limit Package Limit 1 10 dc 100 SINGLE PULSE TIME (s) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 22. Single Pulse Maximum Power Dissipation Figure 23. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 8 NTGD4167C 1 Duty Cycle = 0.5 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE NORMALIZED 0.2 0.1 0.05 0.02 0.01 Single Pulse 0.001 0.01 0.1 t, TIME (s) 1 10 100 1000 0.1 0.01 0.0001 Figure 24. FET Thermal Response ORDERING INFORMATION Device NTGD4167CT1G Package TSOP6 (Pb-Free) Shipping 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 9 NTGD4167C PACKAGE DIMENSIONS TSOP-6 CASE 318G-02 ISSUE T D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0 MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10 - MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0 INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 - MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10 HE 6 1 5 2 4 3 E b e c L q 0.05 (0.002) A1 A STYLE 13: PIN 1. GATE 1 2. SOURCE 2 3. GATE 2 4. DRAIN 2 5. SOURCE 1 6. DRAIN 1 SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 10 NTGD4167C/D |
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